maximum ratings and thermal characteristics (t c = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d 38 t j = 150 ct c = 70 c30a pulsed drain current (1) i dm 80 power dissipation t c = 25 c38 w t j = 150 c t c = 70 cp d 24 t a = 25 c (2) 2.5 operating junction and storage temperature range t j , t stg 55 to 150 c junction-to-case thermal resistance r jc 3.3 c/w junction-to-ambient thermal resistance (2) r ja 50 c/w notes: (1) pulse width limited by maximum junction temperature (2) surface mounted on a 1in 2 2 oz.. cu pcb (fr-4 material) 9/17/01 GFD25N03 n-channel enhancement-mode mosfet v ds 30v r ds(on) 16.5 m ? i d 38a features advanced trench process technology high density cell design for ultra low on-resistance specially designed for low voltage dc/dc converters fast switching for high efficiency low gate charge mechanical data case: jedec to-252 molded plastic body terminals: solder plated, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250 c/10 seconds at terminals weight: 0.011oz., 0.4g 0.190 (4.826) 0.243 (6.172) 0.063 (1.6) 0.165 (4.191) 0.100 (2.54) 0.118 (3.0) 0.245 (6.22) 0.235 (5.97) 0.040 (1.02) 0.025 (0.64) 0.410 (10.41) 0.380 (9.65) 0.170 (4.32) min. 0.214 (5.44) 0.206 (5.23) 0.265 (6.73) 0.255 (6.48) 0.023 (0.58) 0.018 (0.46) 0.094 (2.39) 0.087 (2.21) 0.204 (5.18) 0.156 (3.96) 0.197 (5.00) 0.177 (4.49) 0.035 (0.89) 0.028 (0.71) gs d 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.009 (0.23) 0.001 (0.03) 0.020 (0.51) min. 0.060 (1.52) 0.045 (1.14) 0.050 (1.27) 0.035 (0.89) to-252 (dpak) dimensions in inches and (millimeters) mounting pad layout g d s t rench g en f et new product
electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 2.5 v gate-body leakage i gss v gs = 20v, v ds = 0v 100 na zero gate voltage drain current i dss v ds = 24v, v gs = 0v 1 a v ds = 24v, v gs = 0v, t j = 125 c 10 on-state drain current (1) i d(on) v ds 5v, v gs = 10v 80 a drain-source on-state resistance (1) r ds(on) v gs = 10v, i d = 19a 12.5 16.5 m ? v gs = 4.5v, i d = 15a 19 25 forward transconductance (1) g fs v ds = 5v, i d = 19a 25 s dynamic total gate charge q g v ds = 15v, v gs = 5v,i d = 19a 11 14 22 28 nc gate-source charge q gs v ds = 15v, i d = 19a 3.4 gate-drain charge q gd v gs = 10v 3.4 turn-on delay time t d(on) 10 18 turn-on rise time t r v dd = 15v, i d = 1a 14 25 turn-off delay time t d(off) v gen = 10v, r g = 6 ? 38 60 ns turn-off fall time t f 610 input capacitance c iss v ds = 15v, v gs = 0v 1173 output capacitance c oss f = 1.0mh z 199 pf reverse transfer capacitance c rss 112 source-drain diode diode forward voltage (1) v sd i s = 19a, v gs = 0v 0.9 1.2 v continuous source current (diode conduction) i s 30 a notes: (1) pulse test; pulse width 300 s, duty cycle 2% GFD25N03 n-channel enhancement-mode mosfet g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
GFD25N03 n-channel enhancement-mode mosfet ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 10 30 40 01234 5 fig. 1 ?output characteristics 0.005 0.015 0.02 0.01 0.025 010203040 fig. 4 ?on-resistance vs. drain current 0 10 20 40 30 12 1.5 3 2.5 4 3.5 4.5 fig. 2 ?transfer characteristics 20 v gs = 2.5v 0.8 0.6 1.4 1.6 1.8 1.2 1 -- 50 -- 25 25 50 75 100 125 150 0 fig. 5 ?on-resistance vs. junction temperature v gs = 10v i d = 19a v gs = 4.5v v gs = 10v t j = 125 c --55 c 3.0v 3.5v v ds = 10v 0.4 1.4 1.2 0.6 0.8 1 -- 50 -- 25 25 50 75 100 125 150 0 fig. 3 ?threshold voltage vs. temperature i d = 250 a i d -- drain source current (a) v ds -- drain-to-source voltage (v) r ds(on) -- on-resistance ( ? ) i d -- drain current (a) i d -- drain current (a) v gs -- gate-to-source voltage (v) r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) v gs(th) -- threshold voltage (v) t j -- junction temperature ( c) v gs = 4.0v, 4.5v, 5.0v, 6v, 10v 25 c
GFD25N03 n-channel enhancement-mode mosfet ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 300 600 900 1200 1500 0 5 10 15 30 20 25 fig. 8 capacitance c rss c oss f = 1mh z v gs = 0v 0 2 4 6 8 10 04 8 16 12 fig. 7 gate charge 20 24 v ds = 15v i d = 19a 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 t j = 125 c fig. 9 source-drain diode forward voltage 25 c --55 c v gs = 0v i s -- source current (a) v sd -- source-to-drain voltage (v) q g -- gate charge (nc) v gs -- gate-to-source voltage (v) c -- capacitance (pf) v ds -- drain-to-source voltage (v) 0 0.05 0.04 0.03 0.02 0.01 0.06 0.07 246810 fig. 6 on-resistance vs. gate-to-source voltage i d = 19a t j = 125 c 25 c r ds(on) -- on-resistance ( ? ) v gs -- gate-to-source voltage (v) c iss
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